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| PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN 60N80P = 800 V = 53 A RDS(on) 140 m trr 250 ns VDSS ID25 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 2 TC = 25 C Maximum Ratings 800 800 30 40 53 250 30 100 5 20 1040 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features * International standard package * Encapsulating epoxy meets 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Mounting torque Terminal connection torque 300 2500 3000 UL 94 V-0, flammability classification isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect * miniBLOC with Aluminium nitride l l 1.5 / 13 Nm/lb.in. 1.5 / 13 Nm/lb.in. 30 g l Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT, Note 1 TJ = 125 C Characteristic Values Min. Typ. Max. 800 3.0 5.0 200 25 3000 140 V V nA A A m Advantages l l l Easy to mount Space savings High power density (c) 2006 IXYS All rights reserved DS99562E(02/06) IXFN 60N80P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 35 67 18 VGS = 0 V, VDS = 25 V, f = 1 MHz 1200 44 36 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 (External) 29 110 26 250 VGS = 10 V, VDS = 0.5 VDSS, ID = IT 90 78 0.12 0.05 S nF pF pF ns ns ns ns nC nC nC C/W C/W SOT-227B Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS = 20 V; ID = IT, Note 1 Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Notes: Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 25A, -di/dt = 100 A/s VR = 100V Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 60 150 1.5 250 0.6 6.0 A A V ns C A 1. Pulse test, t 300 s, duty cycle d 2 % Test current IT = 30 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFN 60N80P Fig. 1. Output Characteristics @ 25C 60 55 50 45 V GS = 10V 7V 100 120 V GS = 10V 7V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 5V 6V I D - Amperes 40 80 60 6V 40 20 5V 0 0 3 6 9 12 15 18 21 24 27 30 V DS - Volts V DS - Volts Fig. 3. Output Characteristics @ 125C 60 55 50 45 V GS = 10V 7V 3.2 Fig. 4. R DS(on) Normalized to ID = 30A Value v s. Junction Temperature V GS = 10V 2.8 R DS(on) - Normalized 2.4 2 1.6 1.2 0.8 0.4 I D - Amperes 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 6V I D = 60A I D = 30A 5V 14 16 18 20 -50 -25 0 25 50 75 100 125 150 V DS - Volts T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 30A Value vs. Drain Current 2.8 2.6 2.4 V GS = 10V TJ = 125C 60 55 50 45 Fig. 6. Maximum Drain Current vs. Case Temperature R DS(on) - Normalized 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 20 40 60 80 100 120 TJ = 25C I D - Amperes 40 35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150 I D - Amperes T J - Degrees Centigrade (c) 2006 IXYS All rights reserved IXFN 60N80P Fig. 7. Input Admittance 80 70 60 50 40 30 20 10 0 4 4.25 4.5 4.75 5 5.25 5.5 5.75 6 6.25 6.5 6.75 130 120 110 100 TJ = 125C 25C - 40C Fig. 8. Transconductance g f s - Siemens 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 TJ = - 40C 25C 125C I D - Amperes V GS - Volts I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 180 160 140 120 10 9 8 7 V DS = 400V I D = 30A I G = 10mA Fig. 10. Gate Charge I S - Amperes V GS - Volts TJ = 125C TJ = 25C 100 80 60 40 20 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200 220 240 260 V SD - Volts Q G - NanoCoulombs Fig. 11. Capacitance 100,000 f = 1 MHz Fig. 12. Maximum Transient Thermal Resistance 1.000 Capacitance - PicoFarads 10,000 C iss 1,000 C oss R (th)JC - C / W 0.100 0.010 100 C rss 10 0 5 10 15 20 25 30 35 40 0.001 0.0001 0.001 0.01 0.1 1 10 V DS - Volts Pulse W idth - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. |
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